摘要：In this work, a chemical vapor deposition (CVD) model of polycrystalline silicon was set up to analyze the simultaneous transfer of momentum, energy and mass in a trichlorosilane and hydrogen system and couple the gas-phase reaction with the surface reaction of polycrystalline. Then Fluent 6.2 was used to simulate the influence of the gas inlet velocity, the reaction pressure, the surface temperature and the gas composition on the growth rate and deposition efficiency of the polycrystalline silicon. The results show that growth rate of polycrystalline silicon increases with the increase of the reaction temperature and pressure while maintaining constant all other conditions, and the growth rate of polycrystalline silicon lineally increases with the increase of the molar fraction of hydrogen while keeping a high hydrogen concentration.

卷号：39

期号：2

是否译文：否