摘要：The fluidized bed Chemical Vapor Deposition (CVD) process constitutes today one of the most efficient techniques for modification and control of the surface state of powders. In this paper, the polycrystalline silicon fluidized bed CVD process from silane (SiH4) has been modeled. The multi-fluid Eulerian code MFIX coupled homogenous and heterogeneous reaction models was utilized to simulate the distribution of the silane, silylene, silicon deposition rates from them and the influence of the concentration of silane and reaction temperature on the growth rate of the polycrystalline silicon and the silane conversion. The results show that the polycrystalline silicon deposition mainly occurred at the dense zone and the periphery of the bubbles. The contribution of rather low concentration silylene to deposition rate is about 10% of the one of the silane. The numerical growth rates of polysilicon are nearly consistent with the experimental results.

卷号：41

期号：4

是否译文：否