Electronic Transport Properties of Hydrogenated Amorphous Silicon Thin Films Deposited on Plastic Substrates
关键字：Electronic transport properties; hydrogenated amorphous silicon thin film; plastic substrates
摘要：Aiming for potential application in flexible solar cells, electronic transport properties are studied for hydrogenated amorphous silicon thin films on plastic substrates. Intrinsic hydrogenated amorphous silicon layers are deposited on Kapton and Upilex-s polyimide substrates at temperatures of 100 degrees C and 180 degrees C by plasma enhanced chemical vapor deposition (PECVD) system. Layers on 75 mu m and 125 mu m thick Kapton and on 125 mu m Upilex-s substrates are characterized by dark conductivity and activation energy measurements. It can be concluded that the intrinsic layer on 125 mu m thick Kapton and Upilex-s plastic both have favorable electrical properties and therefore could be employed as substrate material for flexible solar cells.
卷号：221
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是否译文：否
