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一种获得SiC@SiO<sub>2</sub> 同轴纳米电缆超疏水表面的改性方法

Release time:2020-12-14  Hits:

  • Application Number:CN201410419279.7
  • Service Invention or Not:no
  • Application Date:2014-08-23
Pre One: 基于PEDOT#rGO#Ni(OH)<sub>2</sub>复合纳米材料的无酶葡萄糖传感器电极的制备方法
Next One: 获得包覆层厚度可控的SiC@SiO<sub>2</sub>纳米电缆及无包覆SiC纳米线的制备技术

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