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张猛
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获得包覆层厚度可控的SiC@SiO<sub>2</sub>纳米电缆及无包覆SiC纳米线的制备技术
Release time:2020-12-14 Hits:
Application Number:
CN201410348897.7
Service Invention or Not:
no
Application Date:
2014-07-16
Pre One:
一种获得SiC@SiO<sub>2</sub> 同轴纳米电缆超疏水表面的改性方法
Next One:
无模板一步法制备高比例石墨型氮掺杂石墨烯管的方法