摘要：By using successive ionic layer adsorption and reaction (SILAR) method, we provide for the first time comprehensive exploitation on experimental details regarding Cu<inf>2</inf>ZnSnS<inf>4</inf> (CZTS) film deposition, including the optimization of precursor solution pH, buffer agent, reaction temperature, and annealing conditions. In particular, the investigation concerning the number of deposition cycles and annealing conditions and the manner in which they determine CZTS properties, such as surface morphology, crystallinity, film thickness, and energy bandgap, is emphasized. All of the above possess significance for CZTS film preparation, yet they are seldom reported systematically to our knowledge. Finally, we present a preliminary evaluation of the photoelectric performance of CZTS nanocrystal by a simple photoelectrochemical device configuration. Although the photoelectric properties of SILAR-deposited CZTS films await further improvement, current results regarding our experimental deposition are promising due to a fair trade-off between cost and its potential in photovoltaic applications. © 2015 Elsevier B.V. All rights reserved.

卷号：349

是否译文：否