关键字：PEROVSKITE PHOTODETECTOR; GROWTH; FILMS

摘要：Recent advancements in photodetector technology have significantly improved device performance and stability. In this study, we developed a high-performance double perovskite photodetector based on Cs2AgSbBr6 through systematic bismuth and cobalt co-doping. Initially, bismuth doping was optimized, with Cs2AgSb1-xBixBr6 (x = 0.35) demonstrating superior optoelectronic properties, including an On/Off ratio of 94.36 and fast response times (decay time = 5.98 ms, rise time = 8.88 ms). The enhanced crystallinity of the perovskite film, attributed to Bi3 + incorporation, facilitated improved carrier generation and transport. Building upon this optimized structure, bismuth-cobalt co-doping was introduced to further refine energy level alignment within the device. The co-doped Cs2AgSb1-x-yBixCoyBr6 (x = 0.35, y = 0.03) photodetector exhibited a significantly On/Off ratio of 117.98 and even faster response times (decay time = 1.96 ms, rise time = 4.51 ms). Characterization and electrochemical analysis revealed that co-doping improved film morphology, crystal quality, and carrier transport efficiency. Moreover, the stable crystal structure of the optimized films contributed to the device's excellent overall performance. These findings highlight the effectiveness of elemental doping strategies in enhancing perovskite photodetectors, offering a promising approach for next-generation optoelectronic devices.

卷号：1034

期号：

是否译文：否