论文成果
SiC nanowire networks
- 发布时间：2023-10-19
- 点击次数：
- 关键字：semiconductors; nanofabrication; microstructure; SEM; TEM
- 摘要：Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C,He were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline beta-SiC and the growth direction is along [111]. A growth mechanism of beta-SiC nanowire networks is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
- 卷号：352
- 期号：1-2
- 是否译文：否