李镇江

+

其他联系方式

  • 邮箱:

论文成果

当前位置: 中文主页 > 科学研究 > 论文成果

Synthesis and field emission properties of silicon carbide nanobelts with a median ridge

  • 发布时间:2023-10-19
  • 点击次数:

  • 关键字:
  • 摘要:beta-Silicon carbide (beta-SiC) nanobelts with a median ridge have been synthesized for the first time via a template/catalyst-free chemical vapor reaction (CVR) method. The characterization results show that the beta-SiC nanobelts with widths of 1.5 mu m and thickness of about 10-20 nm consist of nanowires with rough surfaces in diameters of 100 nm (median ridge) and two symmetrical lateral flakes with uniform width. A reasonable two-step Vapor-Solid (TSVS) growth mechanism is proposed to explain the formation of the nanobelts on the basis of crystal growth theory. Using the beta-SiC nanobelts as the cathode, the result of field-emission measurements shows that the turn-on field and threshold field of the beta-SiC nanobelts are about 3.2 V mu m(-1) and 5.7 V mu m(-1), respectively. These features make the beta-SiC nanobelts a promising candidate for field emission displays. The beta-SiC nanobelts obtained in this work enrich the family of silicon carbides nanostructures; moreover, the method and growth mechanism could be an effective clue and example for the synthesis of belt-like nanostructures of other materials.
  • 卷号:14
  • 期号:20
  • 是否译文:

崂山校区 - 山东省青岛市松岭路99号   
四方校区 - 山东省青岛市郑州路53号   
中德国际合作区(中德校区) - 山东省青岛市西海岸新区团结路3698号
高密校区 - 山东省高密市杏坛西街1号   
济南校区 - 山东省济南市文化东路80号©2015 青岛科技大学    
管理员邮箱:master@qust.edu.cn