李镇江

+

其他联系方式

  • 邮箱:

论文成果

当前位置: 中文主页 > 科学研究 > 论文成果

Treatment process of coatings of SiC/SiO<inf>2</inf>nanocables studied by X-ray diffraction and transmission electron microscopy

  • 发布时间:2021-03-15
  • 点击次数:

  • 关键字:High resolution transmission electron microscopy;Cleaning - Coatings - Electron microscopy - Purification - Silica - Silicon carbide - X ray diffraction;Alkaline cleaning - Environment friendly - Nanocables - NaOH concentration - NaOH solutions - Reaction temperature - Thickness variation - Treatment process
  • 摘要:In the present work, a simple, efficient and environment-friendly alkaline cleaning technology was developed to remove the SiO<inf>2</inf>coatings of SiC/SiO<inf>2</inf>nanocables, namely treatment of the products in NaOH solution. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). At the reaction temperature of 70 C, the factors including alkaline cleaning time and NaOH concentration affecting the thickness variation of SiO<inf>2</inf>coatings were discussed in detail. The results indicated that with the increment of alkaline cleaning time or NaOH concentration, the thickness of SiO<inf>2</inf>coatings was reduced gradually until they were completely removed. On the basis of the above characterization and analysis results, the optimum treatment process parameters (reaction temperature of 70 C, NaOH concentration of 1 mol L<sup>&minus;1</sup>and purification time of 40 min.) of SiC/SiO<inf>2</inf>nanocables were selected. Under these conditions, the highly purified SiC nanowires were obtained. Copyright &copy; 2017 American Scientific Publishers All rights reserved
  • 卷号:17
  • 期号:12
  • 是否译文:

崂山校区 - 山东省青岛市松岭路99号   
四方校区 - 山东省青岛市郑州路53号   
中德国际合作区(中德校区) - 山东省青岛市西海岸新区团结路3698号
高密校区 - 山东省高密市杏坛西街1号   
济南校区 - 山东省济南市文化东路80号©2015 青岛科技大学    
管理员邮箱:master@qust.edu.cn