论文成果
Synthesis, growth mechanism and elastic properties of SiC@SiO<inf>2</inf>coaxial nanospring
- 发布时间：2021-03-15
- 点击次数：
- 关键字：Silicon carbide;Elasticity - Silica;Chemical vapor reaction - Elastic energy storage - Elastic properties - Formation process - Growth mechanisms - Growth modeling - Nanomechanical device - Spring constants
- 摘要：Herein, a novel coaxial nanospring composed of a helical SiC core and a uniform amorphous SiO<inf>2</inf>sheath (SiC@SiO<inf>2</inf>) has been synthesized via a template/catalyst-free chemical vapor reaction (CVR) approach. An atomic layer dislocation stacking growth model is firstly established for explaining the formation process of the nanospring, which offers a valuable model and an effective clue for understanding the growth of other nonlinear nanostructures. The elastic properties of the products have been investigated by calculating the corresponding spring constant of the SiC@SiO<inf>2</inf>coaxial nanospring with a dynamic radius, which makes it a promising candidate for nanomechanical devices, self-sensing resonators and nanoscale elastic energy storage. This journal is<br/> © the Partner Organisations 2014.
- 卷号：4
- 期号：85
- 是否译文：否