论文成果
Study on fabrication and growth mechanism of the large-scale SiC nanowire networks
- 发布时间：2021-03-15
- 点击次数：
- 关键字：SiC nanonetworks; fabrication; growth mechanism
- 摘要：2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via chemical vapor reaction approach, in a graphite reaction cell. The mixture of milled Si and SiC powder and C3H6 were chosen as the starting materials. The 2-D semiconductor SiC nanonetworks can be obtained via controlling the location of the substrate and the mixed powder, the heat preservation time, the flow of C3H6, and other preparation conditions. The samples were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) and the High-resolution transmission electron microscopy (HRTEM). The results indicated that interconnecting nanowires forms the nanonetworks, the nanowires with diameter about 20-70nm are single crystalline beta-SiC and the growth direction is along [111]. It is noteworthy that most of the junctions were connected through three branches. A growth mechanism of beta-SiC nanowires networks was discussed.
- 卷号：34
- 是否译文：否
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