论文成果
Preparation of SiC nanowires with fins by chemical vapor deposition
- 发布时间：2021-03-15
- 点击次数：
- 关键字：SiC; nanowires with fins; chemical vapor reaction; SEM; TEM
- 摘要：SiC nanowires with fins have been prepared by chemical vapor deposition in a vertical vacuum furnace by using a powder mixture of milled Si and SiO2 and gaseous CH4 as the raw materials. The products were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These investigations confirm that the nanowires with fins are cubic beta-SiC. The diameter of the fins is about 100-120nm and the diameter of the inner core stems is about 60-70nm. The formation process of the beta-SiC nanowires with fins is analyzed and discussed briefly. (c) 2007 Elsevier B.V. All rights reserved.
- 卷号：39
- 期号：2
- 是否译文：否