Key Words:GaN nanotweezers; etched; synthesis; photoluminescence
Abstract:The synthesis and the novel photoluminescence properties of a nanotweezers-like GaN had been reported, the MgO single crystal substrates were chemical polished in order to form a lot of small convex hillocks on the substrates surface. Subsequently, GaN nanotweezers had been fabricated by reacting gallium and ammonia on the etched cubic MgO (100) single crystals substrates. The samples were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The results show that nanotweezers consist of a bottom rod of the diameters of about 100nm similar to 150nm and two arms, and the bottom of the arms are about 40 similar to 70nm and the top are about 15nm similar to 30nm in diameter. The result of the photoluminescence shows that there were one obviously broad stronger peak at around 450nm which in the field of blue emission. The peak position has a red shift with respect to the cubic GaN film, compared to the previously reported values. Furthermore, there were three cleaving peaks at 418nm, 450nm and 469nm, respectively.
Volume:34
Issue:
Translation or Not:no