Key Words:Silicon compounds;Chemical vapor deposition - Electron microscopy - Electrons - Field emission - High resolution transmission electron microscopy - Nanostructures - Nanowires - Plasma applications - Scanning electron microscopy - Silicon carbide - X ray diffraction;FE properties - Field emission property - Plasma treatment - Selected area electronic diffraction - SiC nanowire - Threshold fields - Turn-on field
Abstract:&beta;-SiC nanowires (SiC NWs) were modified by H<inf>2</inf>and N<inf>2</inf>plasma treatment for improving the field-emission (FE) properties. The FE property of SiC NWs treated by H<inf>2</inf>and N<inf>2</inf>plasma was significantly improved, their turn-on field and threshold field were 3.2 and 6.7V&mu;m^-1for a 10-min H<inf>2</inf>treatment, 3.0 and 6.3V&mu;m^-1for a 20-min H<inf>2</inf>treatment, and 2.8 and 6.0V&mu;m^-1for a 10-min N<inf>2</inf>treatment, respectively, while SiC NWs treated by N<inf>2</inf>for 20min displayed poorer FE properties compared with untreated SiC NWs. The results of scanning electron microscope (FE-SEM), transmission electron microscopy, high-resolution transmission electron microscopy, selected-area electronic diffraction, and X-ray diffraction showed that the surface of the SiC NWs became rough, but their microstructure did not change after the plasma treatments. The point effect was proposed to explain the improvement of FE properties. A new, simple, and effective method for improving SiC NWs FE properties was discovered, and it may serve as a referential work for enhancing FE properties of other one-dimensional nonmaterials. &copy; 2014 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.<br/>
Volume:211
Issue:7
Translation or Not:no