Characterization of Low Temperature Deposited Flexible Amorphous Silicon Solar Cells
关键字：flexible solar cells; low temperature; amorphous silicon; PECVD
摘要：N-i-p structure amorphous silicon solar cells deposited on flexible and glass substrates are successfully fabricated at low substrate temperature of 100 degrees C through plasma enhanced chemical vapor deposition (PECVD) system. The external parameters of solar cells are characterized by solar simulator. The results indicate the best dot of the solar cells with glass substrate can reach to 5.54 % of conversion efficiency with rill factor of 0.54 and open circuit voltage of 0.9, while the conversion efficiency for flexible solar cells is 4.03% with rill factor of 0.5 and open circuit voltage of 0.82. With conversion efficiencies in the same magnitude, the low temperature deposited flexible solar cells show promising potentials on future large scale applications.
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