关键字：Optical properties; hydrogenated amorphous silicon; thin film; Plasma Enhanced Chemical Vapor Deposition (PECVD)
摘要：Thin film Amorphous Silicon materials have found wide application in the field of photovoltaic solar cells. In this paper, thin layers (around 300nm) of intrinsic hydrogenated amorphous silicon (a-Si: H) have been fabricated on glass (Corning Eagle(2000TM)) substrates by employing plasma enhanced chemical vapor deposition (PECVD) system with gas sources of silane and hydrogen, and their optical properties are thoroughly characterized. Mini-Reflectance and Transmittance system (mini-RT) and Dual Beam Photoconductivity system (DBP) system are employed to investigate the effect of film temperature on optical properties of a-Si:H under different reaction gas concentrations. Study parameters include absorption coefficient, Tauc bandgap, Urbach energy, refractive index, defect density and so on. Results indicate that under studied deposition conditions, a-Si: H film owns device-quality optical properties and could be applied on fabricating thin film solar cells as the absorber layer material and on other photovoltaic or photo electronic devices.
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