Low-valent cation doping and leaching to construct single-atom Cu decorated Cu-ZnIn<sub>2</sub>S<sub>4</sub> with multiple defects for boosting photocatalytic H<sub>2</sub> evolution
关键字：S VACANCIES; HYDROGEN; ZNIN2S4; SCHEME; SITES; MOS2
摘要：It is a promising means to enhance photocatalytic activity by ions doping, single -atom decoration, and vacancies introducing, yet a simple approach to realize their simultaneous appearance in one material remains a great challenge hitherto. Herein, an original strategy of low-valent cation doping and leaching is developed to construct Cu single atom (Cu SAs)-decorated and monovalent Cu ion (Cu ) -doped ZnIn2S4 photocatalyst (RCuZIS) with multiple defects. The Cu doping atoms and Cu/In/S vacancies clusters induce electron -poor zones, meanwhile, S vacancies and isolated Cu SAs result in electron -rich regions, thus forming some local electric field with different states of charge, which can act as electron -accepting and donating centers accelerating the transfer and separation of photocarriers. The optimized RCu-ZIS delivers a high visible -light -driven H-2 evolution activity of 70.58 mmol & sdot;g(-1)& sdot;h(-1) with an AQE of 12.24% at 420 nm. This work opens up an all -in -one modification strategy on redounding photocatalytic activity through rational structural fine-tuning.
卷号：348
期号：-
是否译文：否