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摘要：A Chemical Vapor Deposition (CVD) model of polycrystalline silicon was set up to analyze the simultaneous transfer of momentum, energy and mass and couple the gas-phase reaction with the surface reaction of polycrystalline in a 3D Siemens furnace. Then Fluent 6.2 was utilized to simulate the influence of the gas inlet velocity, the reaction pressure, the surface and temperature on the growth rate of the polycrystalline silicon in the furnace. The results showed that growth rate of polycrystalline silicon increases with the increasing in the reaction temperature and pressure while maintaining constant all other conditions.

卷号：33

期号：3

是否译文：否