关键字：SILICON
摘要：Dielectric relaxation and magnetodielectric (MD) effects were observed in 0.36BiScO3-0.64PbTiO3/La0.7Sr0.3MnO3 thin films. The universal dielectric response and distribution of relaxation time modifications were introduced into the Maxwell-Wagner (MW) model. Based on modified MW model, the negative MD response at low frequencies was attributed to magnetostriction of La0.7Sr0.3MnO3, while the large positive response at high frequencies mainly to the magnetoresistance of La0.7Sr0.3MnO3, and these two factors canceled each other out at intermediate frequencies. Moreover, a giant room temperature MD response of 9.5% was observed, and the linear MD response at 52 kHz was ascribed to the linear magnetoresistance effects.
卷号：110
期号：4
是否译文：否