青岛科技大学主页平台管理系统 zhangshuai--Home-- Enhanced ferroelectric properties in BiAlO3 modified lead-free Mn-doped Bi0.5(Na0.8K0.2)0.5TiO3 thin films

张帅

Associate professor

Supervisor of Master's Candidates

Education Level:博士研究生

Degree:博士

Discipline:Material Physics and Chemistry
Material Science

Recommended MA Supervisor Team member

Paper Publications

Current position: Home > Scientific Research > Paper Publications

Enhanced ferroelectric properties in BiAlO3 modified lead-free Mn-doped Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Release time:2024-12-24 Hits:

Key Words:ENERGY-STORAGE DENSITY; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; DEPENDENCE; LAYERS; BI

Abstract:Mn-doped (1-x)Bi-0.5(Na0.8K0.2)(0.5)TiO3-xBiAlO(3) (Mn:BNKT-xBA) thin films were synthesized on lanthanum nickelate-coated silicon substrates by sol-gel method. The second phase issue of the film can be effectively addressed by optimizing the substrate, and the maximum polarization and breakdown strength can be increased by introducing the proper amount of Al3 , which is advantageous for the film for energy storage. The results have shown that the Mn:BNKT-0.03BA film exhibits superior ferroelectric properties (with remanent polarization (P-r) of 23.72 mu C/cm(2), maximum polarization (P-max) of 75.37 mu C/cm(2)), which could be an excellent candidate for ferroelectric thin film capacitors.

Volume:21

Issue:5

Translation or Not:no

Next One:One-step synthesis of BiOCl/Bi4NbO8Cl heterostructures with high-purity and enhanced photocatalytic activities via in-situ room-temperature acid-etching

张帅

Paper Publications

Enhanced ferroelectric properties in BiAlO&lt;sub&gt;3&lt;/sub&gt; modified lead-free Mn-doped Bi&lt;sub&gt;0.5&lt;/sub&gt;(Na&lt;sub&gt;0.8&lt;/sub&gt;K&lt;sub&gt;0.2&lt;/sub&gt;)&lt;sub&gt;0.5&lt;/sub&gt;TiO&lt;sub&gt;3&lt;/sub&gt; thin films

Enhanced ferroelectric properties in BiAlO<sub>3</sub> modified lead-free Mn-doped Bi<sub>0.5</sub>(Na<sub>0.8</sub>K<sub>0.2</sub>)<sub>0.5</sub>TiO<sub>3</sub> thin films