青岛科技大学主页平台管理系统 zhangshuai--Home-- Magnetodielectric response in 0.36BiScO3-0.64PbTiO3/La0.7Sr0.3MnO3 thin films and the corresponding model modifications

张帅

Associate professor

Supervisor of Master's Candidates

Education Level:博士研究生

Degree:博士

Discipline:Material Physics and Chemistry
Material Science

Recommended MA Supervisor Team member

Paper Publications

Current position: Home > Scientific Research > Paper Publications

Magnetodielectric response in 0.36BiScO3-0.64PbTiO3/La0.7Sr0.3MnO3 thin films and the corresponding model modifications

Release time:2023-10-19 Hits:

Key Words:SILICON

Abstract:Dielectric relaxation and magnetodielectric (MD) effects were observed in 0.36BiScO3-0.64PbTiO3/La0.7Sr0.3MnO3 thin films. The universal dielectric response and distribution of relaxation time modifications were introduced into the Maxwell-Wagner (MW) model. Based on modified MW model, the negative MD response at low frequencies was attributed to magnetostriction of La0.7Sr0.3MnO3, while the large positive response at high frequencies mainly to the magnetoresistance of La0.7Sr0.3MnO3, and these two factors canceled each other out at intermediate frequencies. Moreover, a giant room temperature MD response of 9.5% was observed, and the linear MD response at 52 kHz was ascribed to the linear magnetoresistance effects.

Volume:110

Issue:4

Translation or Not:no

Pre One:Preparation and Characterization of Lanthanum Strontium Manganite Thin Films by Metal-Organic Chemical Liquid Deposition

Next One:Magnetocapacitance effects of Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 thin film on Si substrate