关键字：Graphene;Chemical vapor deposition - Electron emission - Field emission - Multilayers - Nanostructured materials - Silica - Silicon carbide;Chemical vapor depositions (CVD) - Current fluctuations - Emission efficiencies - Field emission measurements - High temperature field - Increased temperature - Number of electrons - Structural component

摘要：In the present work, in order to obtain a promising material, SiC@SiO<inf>2</inf>@graphene nanoarrays with numerous flake-like graphene coatings have been prepared on a Si substrate through a simple chemical vapor deposition (CVD) approach. The field emission (FE) measurements show that the turn-on field (E<inf>to</inf>) of the as-synthesized SiC@SiO<inf>2</inf>@graphene nanoarrays is decreased dramatically from 1.75 V μm^-1to 0.73 V μm^-1when temperature is increased from room temperature (RT) to 500 °C, which is superior to most SiC one-dimensional (1D) nanomaterials. The current fluctuation of the emitters at RT and 200 °C is approximately ±1.3% and ±1.7%, respectively, suggesting remarkable emission efficiency and stability of the sample. The excellent FE behavior is mainly attributed to the distinctly increased number of electron emission sites and the Fermi level (E<inf>f</inf>) adjustment caused by the multilayer heterostructure as well as the increased temperatures. Based on the structural components of the nanoarrays, a reasonable "Stripping Reconstruction" mechanism model has been first established. It is believed that not only can the as-synthesized SiC@SiO<inf>2</inf>@graphene nanoarrays be utilised as promising emitters under high temperatures, but also the proposed mechanism model and the multilayer decoration strategy are valuable for the FE enhancement of other 1D nanomaterials.<br/> © The Royal Society of Chemistry 2018.

卷号：6

期号：11

是否译文：否