关键字：SiC nanowires; Simulation; Temperature; Gas flow rate; Gas component

摘要：Chemical Vapor Deposition (CVD) is an appropriate method for preparation of one-dimensional nanomaterials. The distribution of temperature, gas flow rate near the substrate and gas component in the CVD reaction chamber are the main factors to affect the final products grew on the substrate. This paper simulated and analyzed the influence of these factors on the quantity of SiC nanowires (SiC NWs) deposited on the substrate in a self-designed CVD reactor on the basis of the Computation Fluid Dynamics (CFD) principle by using Fluent software. The results showed that temperature of the substrate close to the reactor hole was lower than that of other sites, and that a large amount of turbulence existed at the upside of the reactor hole, impeding the growth of SiC NWs. In addition, the distribution of gas component was also a main factor which makes more SiC NWs deposition on the substrate center. These simulation results have been confirmed by experiments. This research provided a theoretical basis for optimizing process parameters, designing CVD reaction chamber and obtaining SiC NWs growth rate at different sites of the substrate et al. (C) 2014 Elsevier B. V. All rights reserved.

卷号：96

是否译文：否