Treatment process of coatings of SiC/SiO<inf>2</inf>nanocables studied by X-ray diffraction and transmission electron microscopy
- Key Words:High resolution transmission electron microscopy;Cleaning - Coatings - Electron microscopy - Purification - Silica - Silicon carbide - X ray diffraction;Alkaline cleaning - Environment friendly - Nanocables - NaOH concentration - NaOH solutions - Reaction temperature - Thickness variation - Treatment process
- Abstract:In the present work, a simple, efficient and environment-friendly alkaline cleaning technology was developed to remove the SiO<inf>2</inf>coatings of SiC/SiO<inf>2</inf>nanocables, namely treatment of the products in NaOH solution. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). At the reaction temperature of 70 C, the factors including alkaline cleaning time and NaOH concentration affecting the thickness variation of SiO<inf>2</inf>coatings were discussed in detail. The results indicated that with the increment of alkaline cleaning time or NaOH concentration, the thickness of SiO<inf>2</inf>coatings was reduced gradually until they were completely removed. On the basis of the above characterization and analysis results, the optimum treatment process parameters (reaction temperature of 70 C, NaOH concentration of 1 mol L<sup>−1</sup>and purification time of 40 min.) of SiC/SiO<inf>2</inf>nanocables were selected. Under these conditions, the highly purified SiC nanowires were obtained. Copyright © 2017 American Scientific Publishers All rights reserved
- Volume:17
- Issue:12
- Translation or Not:no
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SiC一维、准一维纳米材料的制备工艺研究