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摘要：A main chain donor-acceptor copolysiloxane named poly(N,N'-bis(dimethylsiloxane) propyl tetrachloro perylene tetracarboxylic acid diimide-alt-bis(dimethylsiloxane)-2,2': 5',2 ''-terthiophene) (PBIClSi-alt-PTSi) was successfully synthesized, in which terthiophene donors and perylenediimide acceptors are connected with siloxanes. PBIClSi-alt-PTSi displays high thermal stability, which ensures its long-term stability for device operation. The calculated HOMO and LUMO energy levels of PBIClSi-alt-PTSi are mainly located on terthiophene and perylenediimide moieties, respectively. A fabricated memory device with the configuration of ITO/PBIClSi-alt-PTSi/Au(Al) shows nonvolatile write-once-read many-times (WORM) memory characteristics. Its turn-on threshold voltage is quite low (ca. 1.0 V), meanwhile the on/off current density ratio is around 6 x 10(3) under ambient atmosphere. As far as we know, this is the first example of a main chain donor-acceptor copolysiloxane used as a memory device. And the low turn-on threshold voltage of 1.0 V may be caused by the high flexibility of Si-O-Si. Furthermore, the progression of the ITO/PBIClSi-alt-PTSi/Au device from a low to high conductivity state is detected by current sensing atomic force microscopy for the first time. At the threshold voltage, the topology of the PBIClSi-alt-PTSi films displays an obvious change due to the arrangement of molecular chains.

卷号：8

期号：22

是否译文：否