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摘要：In this work, pristine graphene, nitrogen-doped graphene and boron-doped graphene were synthesized by a facile solvothermal process using potassium or lithium nitride as catalyst. The formation mechanism of graphene and doped graphene was discussed, and the chlorine gas generated during the reaction performed a significant role. High yield of graphene and doped graphene can be produced via the solvothermal route with relatively mild conditions, and X-ray photoelectron energy spectroscopy analysis confirmed the doping status and concentration of nitrogen or boron within graphene sheets. Especially, electrical properties of graphene-based field effect transistors revealed that the introduction of nitrogen or boron atoms into graphene sheets can effectively tailor electrical property of graphene from conducting characteristics to semiconducting behaviors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798484]

卷号：5

期号：2

是否译文：否