关键字：LEAD IODIDE; EFFICIENT; METHYLAMMONIUM; MIGRATION; LENGTHS; FILMS

摘要：The spontaneously formed uncoordinated Pb2+ defects usually make the perovskite films demonstrate strong n-type with relatively lower carrier diffusion length and serious non-radiative recombination energy loss. In this work, we adopt different polymerization strategies to construct three-dimensional passivation frameworks in the perovskite layer. Thanks to the strong C equivalent to N center dot center dot center dot Pb coordination bonding and the penetrating passivation structure, the defect state density is obviously reduced, accompanied by a significant increase in the carrier diffusion length. Additionally, the reduction of iodine vacancies also changed the Fermi level of the perovskite layer from strong n-type to weak n-type, which substantially promotes the energy level alignment and carrier injection efficiency. As a result, the optimized device achieved an efficiency exceeded 24 % (the certified efficiency is 24.16 %) with a high open-circuit voltage of 1.194 V, and the corresponding module achieved an efficiency of 21.55 %.

卷号：62

期号：18

是否译文：否