关键字：Thermoelectric; Bi2Te3 thin films; Preferred orientation; Abundant Te

摘要： Bi(2)Te(3 )thin films were fabricated on the (00l)-oriented MgO substrates by the magnetron co-sputtering method. The films microstructure of highly preferred orientation along the c-axis had been obtained through the inducing of single crystal MgO substrates. And some abundant Te was introduced into the Bi2Te3 films through sputtering tellurium target, which affected the scattering process. The (00l) preferred orientation is beneficial to the carriers transport. In this case, the higher performance of Bi2Te3 thin films can be obtained. And microstructure and thermoelectric properties of Bi2Te3 thin films were investigated systematically. (C) 2017 Elsevier B.V. All rights reserved.

卷号：726

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