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Enhanced ferroelectric properties in BiAlO<sub>3</sub> modified lead-free Mn-doped Bi<sub>0.5</sub>(Na<sub>0.8</sub>K<sub>0.2</sub>)<sub>0.5</sub>TiO<sub>3</sub> thin films

Release time:2024-12-24| Hits:

Key Words:ENERGY-STORAGE DENSITY; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; DEPENDENCE; LAYERS; BI

Abstract:Mn-doped (1-x)Bi-0.5(Na0.8K0.2)(0.5)TiO3-xBiAlO(3) (Mn:BNKT-xBA) thin films were synthesized on lanthanum nickelate-coated silicon substrates by sol-gel method. The second phase issue of the film can be effectively addressed by optimizing the substrate, and the maximum polarization and breakdown strength can be increased by introducing the proper amount of Al3 , which is advantageous for the film for energy storage. The results have shown that the Mn:BNKT-0.03BA film exhibits superior ferroelectric properties (with remanent polarization (P-r) of 23.72 mu C/cm(2), maximum polarization (P-max) of 75.37 mu C/cm(2)), which could be an excellent candidate for ferroelectric thin film capacitors.

Volume:21

Issue:5

Translation or Not:no

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One-step synthesis of BiOCl/Bi4NbO8Cl heterostructures with high-purity and enhanced photocatalytic activities via in-situ room-temperature acid-etching

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