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Improve field emission properties of SiC nanowires by doping rare earth cerium under different methane ventilation rate

  • 发布时间:2023-10-19
  • 点击次数:

  • 关键字:SILICON-CARBIDE NANOWIRES; ZNO NANOWIRES; FABRICATION; MORPHOLOGY; DENSITY; ARRAYS
  • 摘要:Cerium (Ce)-doped SiC nanowires (NWs) were synthesized by chemical vapor reaction (CVR) method under diverse methane (CH4) ventilation rates, with milled Si-SiO2 mixed powders being used as silicon source. Afterwards, the products were characterized to be beta-SiC. In addition, FT-IR analysis reveals that the vibration intensity of Si-O group has been significantly reduced after doping with Ce, and the contraction vibration peak of Ce-O group appears at 882 cm(-1). After Ce doping, the energy gap shows a decreasing trend from 1.37 to 0.9 eV, as determined by Material Studion 4.2. At the CH4 ventilation rate of 0.12 sccm, the content of Ce displays a relatively high value of 0.93 at%, the coating layer of SiO2 is about 12 nm, and the turn-on field achieves a minimum value of about 2.47 V mu m(-1). A synergetic mechanism was proposed for explaining the influence of the morphology and Ce concentration on the field emission (FE) properties of Ce-doped SiC NWs. Findings in the present study may provide certain foundation for future studies examining the FE properties of additional one-dimensional nano-material.
  • 卷号:277
  • 期号:wu
  • 是否译文:

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