Key Words:Chemical vapor deposition;Electron emission - Field emission - Field emission cathodes - Heterojunctions - Silicon carbide - Temperature - Thermodynamics;Chemical compositions - Chemical vapor depositions (CVD) - Field emission property - Field-emission behavior - Heterojunction emitters - Reaction thermodynamics - Synthesis temperatures - Temperature-controlled synthesis
Abstract:β-SiC/SiO<inf>2</inf>coaxial heterogeneous emitters composed of a SiC nanowire core and a uniform amorphous SiO<inf>2</inf>coating have been fabricated via the chemical vapor deposition (CVD) technique. The effect of synthesis temperature on the yield, microstructure, and chemical composition of the products was systematically analysed. A rational explanation for the growth of the β-SiC/SiO<inf>2</inf>emitter was proposed and analysed from the perspective of the reaction thermodynamics. The field emission behaviors of the β-SiC/SiO<inf>2</inf>coaxial nanocables exhibit a strong dependence on the synthesis temperatures. Excellent performances with a low turn-on field (E<inf>to</inf>) of 0.63 V μm<sup>-1</sup>and threshold field (E<inf>th</inf>) of 1.92 V μm<sup>-1</sup>have been recorded at 1200 °C. Furthermore, the optimized cathode shows remarkable electron emission stability with the fluctuation of the current density being less than 5.7% after a 3 h long lifetime test. © 2016 The Royal Society of Chemistry.
Volume:6
Issue:61
Translation or Not:no
