教授
博士生导师
硕士生导师
教师拼音名称:liguicun
出生日期:1974-05-12
电子邮箱:
所在单位:材料学院综合办公室
职务:材料科学与工程学院院长
学历:博士研究生
办公地点:材料楼225房间
性别:男
联系方式:guicunli@qust.edu.cn Tel:13730918070
学位:工学博士
职称:教授
毕业院校:中国海洋大学
学科:材料物理与化学
2016-01-01 山东省有突出贡献的中青年专家
2012-11-07 山东省第三届优秀研究生指导教师
2011-04-01 青岛拔尖人才
最后更新时间:..
关键字:HIGHLY EFFICIENT
摘要:Developing rational strategy on inducing efficient direct Z-scheme charge transfer for boosting photocatalytic H2 evolution is stilling a challenging work. In this work, sulfur-deficient ZnIn2S4/In2Se3 (Vs-ZIS/In2Se3) was fabricated, in which, photogenerated electrons in the defect level of Vs-ZIS migrated to the valence band of In2Se3, meanwhile, the interfacial internal electric field provided charge transfer driving force. Under the syn-ergistic effect of defect level and internal electric field, Z-scheme charge transfer was realized in Vs-ZIS/In2Se3, not only accelerated the separation of photocarriers, but also reserved a great deal of photogenerated electrons with intense reducing ability. As a result, the optimized Vs-ZIS/In2Se3 photocatalyst exhibited a visible light -driven H2 evolution rate of 36.53 mmol center dot g- 1 center dot h-1 and an AQE of 17.14 % at 420 nm, about 9.72 and 104.4 -folds of that of Vs-ZIS and In2Se3 respectively. This work donates an advanced pattern for inducing direct Z -scheme charge transfer through creating defect level and internal electric field.
卷号:613
期号:wu
是否译文:否