CN

韩荣江

Supervisor of Master's Candidates

Education Level:博士研究生

Degree:工学博士

Discipline:Material Physics and Chemistry
Material Science

Recommended MA Supervisor Team member

Paper Publications

Current position: Home > Scientific Research > Paper Publications

微管在6H-SiC单晶生长过程中的演化

Release time:2023-10-19 Hits:

Key Words:碳化硅单晶;;升华法;;调制掺氮;;微管;;生长前沿

Abstract:采用升华法生长调制掺氮的6HSiC单晶,其[0001]方向纵切片的掺氮条纹表明,晶体的生长前沿由初始生长阶段的凸形逐渐变成了后续生长阶段近似平坦的形状。发现近似平坦的生长前沿有利于单晶质量的提高。透射光学显微镜观察发现,若微管的延伸方向与6HSiC晶体的[0001]方向偏离角度较大时,微管变得不稳定而离解消失;微管也可终止于六边形空洞或硅滴处。氮元素掺杂可使6HSiC晶体的晶格发生畸变,可导致产生新微管。

Volume:

Issue:11

Translation or Not:no

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