关键字：component; polycrystalline silicon; computer simulation; rib reactor

摘要：In this study, the numerical investigation was adopted to analyze the deposition characteristic of polycrystalline silicon in a rib reactor. Fluent 6.2 was utilized to simulate the simultaneous momentum transfer, energy transfer and mass transfer, and to couple the gas-phase reaction with surface reaction in SiHCl3 -H2 system. Computed flow structure, thermal and species distributions indicated that the deposition rate of polycrystalline silicon is higher but the uniformity of polycrystalline silicon and of the heat transfer are worse in the rib reactor than in a flat reactor.

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