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Intrinsic Self-Trapped Excitons in Graphitic Carbon Nitride
发布时间：2024-12-23点击次数：
- 关键字：PHOTOCATALYSIS; SEMICONDUCTOR; FLUORESCENCE; ANNIHILATION; ABSORPTION; EMISSION; DOTS
- 摘要：Graphitic carbon nitrides (g-C3N4) as low-cost, chemically stable, and ecofriendly layered semiconductors have attracted rapidly growing interest in optoelectronics and photocatalysis. However, the nature of photoexcited carriers in g-C3N4 is still controversial, and an independent charge-carrier picture based on the band theory is commonly adopted. Here, by performing transient spectroscopy studies, we show characteristics of self-trapped excitons (STEs) in g-C3N4 nanosheets including broad trapped exciton-induced absorption, picosecond exciton trapping without saturation at high photoexcitation density, and transient STE-induced stimulated emis. These features, together with the ultrafast exciton trapping polarization memory, strongly suggest that STEs intrinsically define the nature of the photoexcited states in g-C3N4. These observations provide new insights into the fundamental photophysics of carbon nitrides, which may enlighten novel designs to boost energy conversion efficiency.
- 卷号：24
- 期号：15
- 是否译文：否